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by ChancyChance
1155 days ago
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It's not really clear from this paper, it is more handwavy based on today's circuits. They claim that the darlington voltage drop is ~2V which is suitable for 5V to 2.5V regulation, and then introduce 100mV with an NFET as low-dropout for cases where LiPO cells are 3.6 V, or 300 mV above industry standard 3.3V (or the new embedded expectation of 1.8V or 1.2V off a 2x 700mV cells). However, what if I need to regulate 3.35 V to 3.3 V, do I need an Even-lower LDO (ELLDO)? That meants we have HDO (2V), LDO (.1V), ELLDO (0.05V), which becomes an absurdly semantic situation. I think the confusion is that engineers picked the words and it is based on the technology of a current point in time. In their mind, the breakpoint is NFET dropout of 100mV, which is purely subjective. Although I could also argue that my example is silly because it is within the range of tolerance of most datasheets spec for Vin of 3.3V +/- 1%. |
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I still stand by the characterization of LM317 and LM7800 family as "not LDOs". Both devices are Darlingtons with at least two Vbe drops across the series pass element. On the continuum of LDO------Not_LDO, both LM317 and LM7800 are firmly on the Not_LDO side.
[0] https://www.ti.com/lit/an/snva020b/snva020b.pdf