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by ejiblabahaba
1151 days ago
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I'll agree that it's largely a semantic difference and that I overstated the significance of the MOSFET involvement as the pass element - you can design single-transistor PNP elements with only a few hundred millivolts dropout, and at one point TI referred to these as LDOs.[0] Indeed, even the Sziklai pair gets called "quasi-LDO". Individual engineers likely have different personal thresholds for what constitutes an LDO. But it's worth pointing out that in practice there are only a handful of plausible linear regulator pass elements, and the physics of the BJT-based pass elements sort them into a distinctly higher minimum dropout voltage than what is achievable with MOSFETs. I still stand by the characterization of LM317 and LM7800 family as "not LDOs". Both devices are Darlingtons with at least two Vbe drops across the series pass element. On the continuum of LDO------Not_LDO, both LM317 and LM7800 are firmly on the Not_LDO side. [0] https://www.ti.com/lit/an/snva020b/snva020b.pdf |
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