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by memetomancer
1355 days ago
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Perhaps you are unaware of the angstrom scale process nodes on the semiconductor roadmaps? i.e., IMEC, TSMC and Intel all aggressively pursuing "20A" at the moment with an eye toward a new generation of sub-1n production. This isn't just some arbitrary guesswork on a blog, it's practical planning by the major suppliers. Check it out. |
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Node name just barely correlates with minimum feature size (how thin can a line be drawn). That's starting to break down (hence intel 7 and 2N and so on) but that's not the limit I'm speaking of. The "2nm" nodes wind up with functional units about 30nm from center to center.
Compare to the 22nm node which was almost precisely 44nm center to center for a dram cell. In density terms there's maybe a factor of ~20 between 22nm and 2nm processes, so functionally the 2nm node can make things which are about a fifth the linear dimension.
Gate pitch has a fairly hard limit based on voltage and electron wavelength.
You're never going to put another transistor within about 2nm of a first one and have them both work. Hence the roughly order of magnitude in linear dimension past current.