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by sliverstorm
5813 days ago
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It sounds like the device on the hard hat is more like a passive RFID chip; It's hard to be sure, but the article says all the dangerous equipment has transmitters of their own. Of course, the effective difference between the passive RFID chip and a device that simply consumes ambient radio-spectrum EM radiation is small, mostly a paradigm change. Your initial question begets an interesting question- since light is EM radiation, just like radio waves, shouldn't we be able to pick up light with an antenna? If we can figure that out, we can forget about solar cells with their sad efficiency levels. edit: with some quick research, the answer is obvious; while it seems extremely weird to imagine, light can be absorbed by an antenna- and the first and foremost reason this isn't being done already is because the appropriate antenna would be ~700 nanometers long. |
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500nm-wavelength light oscillates at about 600 terahertz, with a period of about 1.7 femtoseconds. If you want to rectify that and turn it into DC current so you can run current semiconductor devices, you need a diode that can switch on once and off once in that period of time. So your forward recovery time plus your reverse recovery time needs to total less than 1.7 femtoseconds. Among other things, I think this implies that the depletion region in the diode needs to be less than 0.9 femtoseconds in width --- at the electron drift velocity of the semiconductor, which I think is typically around 12 orders of magnitude less than c, although in silicon it can be as high as only three orders of magnitude less than c. Which means that your depletion region needs to be 3 orders of magnitude smaller than the wavelength. Unfortunately the wavelength we're talking about here, at around 1000nm, is only four orders of magnitude bigger than a smallish atom, at 0.1nm. So you're pushing up against the bounds of possibility here with an insulating depletion region of a few atoms in thickness.
Forward and reverse recovery times for silicon diodes vary widely. Typical values for discrete components are measured in the tens to hundreds of nanoseconds. Schottky diodes bring that down to tenths of nanoseconds. One nanosecond is one million femtoseconds, so that's still five orders of magnitude too slow.
Anyway, I don't know anything about this stuff, really.