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by kragen
5818 days ago
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You can absorb EM radiation just fine with an antenna that's "too long". It's when it's too short that you run into problems. 500nm-wavelength light oscillates at about 600 terahertz, with a period of about 1.7 femtoseconds. If you want to rectify that and turn it into DC current so you can run current semiconductor devices, you need a diode that can switch on once and off once in that period of time. So your forward recovery time plus your reverse recovery time needs to total less than 1.7 femtoseconds. Among other things, I think this implies that the depletion region in the diode needs to be less than 0.9 femtoseconds in width --- at the electron drift velocity of the semiconductor, which I think is typically around 12 orders of magnitude less than c, although in silicon it can be as high as only three orders of magnitude less than c. Which means that your depletion region needs to be 3 orders of magnitude smaller than the wavelength. Unfortunately the wavelength we're talking about here, at around 1000nm, is only four orders of magnitude bigger than a smallish atom, at 0.1nm. So you're pushing up against the bounds of possibility here with an insulating depletion region of a few atoms in thickness. Forward and reverse recovery times for silicon diodes vary widely. Typical values for discrete components are measured in the tens to hundreds of nanoseconds. Schottky diodes bring that down to tenths of nanoseconds. One nanosecond is one million femtoseconds, so that's still five orders of magnitude too slow. Anyway, I don't know anything about this stuff, really. |
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The silicon would be a much nicer solution though. Thank you for the details on the diodes, I forgot about that part. You're probably right on the diodes being the hold-up.