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by nomel
278 days ago
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200ns seems a bit high. But, if you do the math, you'll find that's a practically negligible difference, at only 6 hours at 5MHz. DRAM appears to be closer to 300 hours, at reasonable temperatures [1], at the worst case workload. It would be interesting if Google released their failure rates, like they did with hard disk vs ssd. [1] modeled failures, page 75: https://repository.tudelft.nl/record/uuid:e36c2de7-a8d3-4dfa... |
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The abstract does indeed say "It was found that the system reliability decreases to 0.84 after 1ยท10^8s at a stressing temperature of 300K", but I can't find anything close to that in the sections about Bias Temperature Instability or Hot Carrier Injection.
The only thing which to me looks close is the rather acute failure in the Radiation Trapping section - but that also states that the failure mode is dependent more on the total dose than time, and the total dose at which it fails is somewhere between 126 krad - 1.26 Mrad. For reference, a dose of 1 krad is universally fatal to a human.
In other words: don't put unshielded DRAM in a nuclear reactor?