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by wtallis
759 days ago
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> When one cell is read in the vertical stack, the interferences produced by the traces in the area increases the cells that need to be rewritten, what consumes the life of the device, by design. You should try being honest about the magnitude of this effect. It takes thousands of read operations at a minimum to cause a read disturb that can be fixed with one write. What you're complaining about is the NAND equivalent of DRAM rowhammer. It's not a serious problem in practice. |
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Here, the dishonest are the SSD manufacturers of the last decade, and they are feeling so comfortable as to introduce QLC into the market.
> It's not a serious problem in practice.
It's as serious as in to read data consume the disk, and the faster its read the faster it's consumed [0]. You should have noticed that SSD disks no longer come with a 10-year warranty.
Under low throughput read-only workloads.It is a paper from 2021, what means sci-hub can be used to read it.
[0] https://dl.acm.org/doi/10.1145/3445814.3446733