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by jbaczuk
902 days ago
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> "It's like driving on a gravel road versus driving on a freeway," de Heer said. "It's more efficient, it doesn't heat up as much, and it allows for higher speeds so that the electrons can move faster." Does it allow for higher speeds? I thought resistance increases the number of collisions the electrons make with the molecules in the material, heating up the material, does it actually change the "speed of electricity"? If anything, I would think it might actually increase, similar to water in a smaller pipe (see current formula below). Either way, I don't know if this (possible) change in speed is in any way significant when it comes to computing. I = NeAVd Where Ne is the number of free/conduction electrons per unit volume,
A is the cross sectional area of the wire, and
Vd is is the drift velocity. |
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Transistor gates act as capacitors in a way. This capacitance increases the delay between switching on/off. [1]
To lower this delay, we can shorten the transistor gate. We've hit a wall with how small we can shorten this length, and it is exceedingly difficult to make smaller gates without running into quantum effects.
Higher electron mobility means that the delay inside the gate is reduced, allowing faster circuits.
[1]http://ece-research.unm.edu/jimp/vlsi/slides/chap4_1.html Switching speed of MOS systems strongly dependent [on]: Parasitic capacitances associated with the MOS transistor. Interconnect capacitance of "wires". Resistance of transistors and wires.