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by tarlinian
1261 days ago
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To be clear, you want to decrease the permittivity that adds capacitance where the accumulation of charge serves no purpose (i.e., in the interconnects) and increase permittivity where we want to have a lot of charge (i.e., on the actual transistor gates so we can produce a large enough electric field to switch the transistor), which is why gate dielectrics use high-k materials like HfO2 and interconnect layers use low-k dielectrics like carbon-doped oxides.) |
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