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by aargh_aargh 1348 days ago
For dummies like me who didn't know what a chiplet is:

https://en.wikipedia.org/wiki/Chiplet

This seems to be about the third reason listed:

> Known good die (KGD): chiplets can be tested before assembly, improving the yield of the final device

Problem:

  > In general, a killer defect is defined as a defect that is 20% the size of the fabrication node.  For
  > example, a defect that is less than 9nm may be acceptable for the 45nm fabrication node, but a defect
  > larger than 2.8nm would be defined as a “killer” defect for the 14nm fabrication node.  For the 5nm
  > fabrication node, a defect measuring only 1nm could be a killer.
  > 
  > This is one of the primary reasons that it has become increasingly difficult to yield large monolithic
  > ICs (as measured in die area) when using leading edge fabrication process technology
Solution: I understood it from the visual explanation in the first chip image (AMDArt2 png) and its description in this article:

https://www.nextplatform.com/2021/06/09/amd-on-why-chiplets-...

3 comments

The issue that you seem to be skirting around but not mentioning is, the chance a chip has a defect increases with die area since defects are randomly distributed across the surface of the wafer. Chiplets are a way for manufacturers to practically increase die area while keeping yields high.
In case it's not obvious the implication is that cost per good part starts to go up quickly. The wafer size and cost is essentially fixed so bigger dies mean both a lower % of parts are good and also fewer fit on the wafer in the first place. Wrong kind of hockey stick chart.
AMD's EPYC-Rome processor, helpful to look at after looking at your link, as the chiplets are nice and visible:

https://cdn.wccftech.com/wp-content/uploads/2018/11/AMD-EPYC...

Is silicon manufacturing done entirely in a vacuum yet?

Because a vacuum pretty eliminates dust - with no air, dust just falls towards either the ground (if it is uncharged), or towards a positive or negatively charged surface (if the dust particle itself is charged).

No (at least not entirely: some steps are done in a vacuum or very low pressure), in part because it's harder to get a vacuum than clean enough air. Also it would cause a lot of other problems as well as not solving the whole problem: a lot of processing steps involve applying chemicals to the surface of the wafer, washing off those chemicals, or otherwise handling liquids which would boil in a vacuum. Those chemicals (including just plain water), also carry the same risk of introducing 'killer particles', so they are also a big part of the process control needed in a fab (the levels of contaminants in water that is required on modern process nodes is actually lower than can be detected practically with current technology: the last levels of water purification are effectively done blind, with yield as the only feedback mechanism).
Search "tsmc contamination" for real-life examples although don't expect any details. I'm sure it's not just TSMC but it's the best place to start.