|
|
|
|
|
by MangoCoffee
1714 days ago
|
|
> process technology migration to 3- and 2-nanometer (nm) based on the company’s Gate-All-Around (GAA) transistor structure I believe GAA is the next gen tech for the node process. Samsung is the first foundry to do GAA w/3nm while TSMC is sticking w/FinFET for their 3nm. It'll be interesting to see how 3nm FinFET compare to 3nm GAA. https://www.anandtech.com/show/16041/where-are-my-gaafets-ts... edit: >After that, transistor structures begin to change. Samsung and TSMC are manufacturing chips at 7nm and 5nm based on today’s finFETs. Samsung will move to nanosheet FETs at 3nm. Intel is also developing GAA technology. TSMC plans to extend finFETs to 3nm, and then will migrate to nanosheet FETs at 2nm around 2024. https://semiengineering.com/the-increasingly-uneven-race-to-... |
|
Samsung Foundry have a history of over promise and under deliver. This 3nm launch will likely be similar to their EUV node which they claim to be industry first but wasn't shipping in any real volume. So arguably they are not lying, but it is a marketing spin.
TSMC is an extremely pragmatic company. It either work or it doesn't, there is no need to save faces. No need to push industry first GAA or FinFET, push for whatever it works within the timeframe with respect to yield and cost. What is the point of having the best tech in 2022 when they cant produce it with enough volume that any of their customer would want?
That is not to say Samsung Foundry are evil or anything, they are pushing very very hard to try and catch up to TSMC and stays competitive in the market. ( Look at what happen to Global Foundry ). And now Intel is coming. Pat Gelsinger seems to be doing all the right thing.