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by jws
5530 days ago
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This Intel R&D paper sums the technology up and has a picture that makes it clear what they are doing: http://www.intel.com/technology/silicon/integrated_cmos.htm In a nutshell, the drain/source is a tall trace, the gate approaches from the side and climbs over the drain/source, covering it on three sides. |
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It is as you said - instead of the gate controlling the flow in a shallow ditch (the old "2D" does have some depth ;-), they built up a pipe and the gate is the choke around it.
Well, that should help stem the pesky leakage current problems that plague the deep sub-micron technologies ...