|
|
|
|
|
by kragen
2502 days ago
|
|
I think Padauk is using 1.3-micron or something? Can't find my notes. I don't think you have to go quite that far into the stone age to get reliability, at least not for digital. Do you have funding to do a MOSIS run or two? I wonder if we could find some. |
|
If you do a project, I suggest 350nm since it's the last node that you can visually inspect the resulting silicon. It's as fast as you go before you need electron microscopes and such. It's also more likely that the open tools for hardware will be able to handle such a node instead of deep sub-micron. Finally, there's old research in transistor-level optimization that might be applied to it in new, open tooling. Might let people do standard cell that inches a bit closer to performance and energy use of custom designs.