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by awalton 2981 days ago
Yeah, you should take the fact they're not using EUV as the tremendous boulder of salt that it is: these are actually 10nm parts. Node names continue to be washed into Megahertz War-style naming schemes.

TSMC's process lines up pretty well with Intel's published numbers for their P1274 10nm process (Contacted Gate Pitch T & I: 54 nm, Minimum Metal Pitch T: 40nm I: 36 nm, High-Density SRAM bitcell size T: 0.027 µm^2 I: 0.0312 µm^2, etc).

What we've learned out of all of this is that Intel's struggles to push tooling towards EUV have benefited the industry at wide, as everyone's spent so much effort there that existing processes and tooling has become cheaper and faster to iterate. They've certainly fallen behind their all-time lead of almost two process generations, but they still appear to be about a generation (18-ish months) ahead of TSMC by published numbers.

But, who actually cares about the numbers, Marketing says 7nm so it's 7nm.

1 comments

There's a big difference when you compare making 7nm features with about 100 process steps whereas EUV are doing it in like 4 steps.
EUV is still going to be 60+ steps.