|
|
|
|
|
by versteegen
3586 days ago
|
|
According to the paper linked in another comment (https://news.ycombinator.com/item?id=12373015), apparently the high-k dielectric nodes used at 45nm and below show ~5x times worse NBTI ageing than non-high-k 45nm PMOS gates, which decides the tolerances that are selected to provide X years of life. (IANAEE) |
|